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NXP Semiconductors
IP4358CX6
Quad channel low capacitance ESD protection
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V I
Parameter
input voltage
Conditions
pins A1, A2, C1 and C2 to ground
Min Max
? 0.5 +5.5
Unit
V
(B1, B2)
V ESD
electrostatic discharge
voltage
pins A1, A2, C1 and C2 to ground
(B1, B2)
contact discharge
air discharge
[1]
[1]
? 15
? 20
+15
+20
kV
kV
IEC 61000-4-2 level 4; pins A1,
A2, C1 and C2 to ground (B1, B2)
contact discharge
air discharge
? 8
? 15
+8
+15
kV
kV
T stg
storage temperature
? 55
+150 ° C
T reflow(peak) peak reflow temperature 10 s maximum
-
260
° C
T amb
ambient temperature
? 35
+85
° C
[1]
Device is qualified with 1000 pulses of ± 15 kV contact discharges each, according to the IEC 61000-4-2
model and far exceeds the specified level 4 (8 kV contact discharge).
5. Characteristics
Table 4. Electrical characteristics
T amb = 25 ° C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ Max
Unit
C (I/O-GND)
input/output to ground
pins A1, A2, C1 and C2 to
[1]
-
1.3
1.5
pF
capacitance
ground (B1, B2); V I = 3.3 V;
f = 1 MHz
I LR
reverse leakage current pins A1, A2, C1 and C2 to
-
-
100
nA
ground (B1, B2); V I = 3.3 V
V BRzd
Zener diode breakdown I test = 1 mA
6
-
9
V
voltage
V F
forward voltage
-
0.7
-
V
R dyn
dynamic resistance
I test = 1 A; IEC 61000-4-5
[1]
Guaranteed by design.
positive discharge
negative discharge
-
-
0.45 -
0.45 -
Ω
Ω
IP4358CX6
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 October 2010
? NXP B.V. 2010. All rights reserved.
3 of 11
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